PART |
Description |
Maker |
S3XB-13-F S3X-13-F S3JB-13-F S3GB-13-F |
3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER RECTIFIER STANDARD SINGLE 3A 600V 600 100A-ifsm 10uA-ir 1.15V-vf SMB 3K/REEL 3 A, 600 V, SILICON, RECTIFIER DIODE RECTIFIER STANDARD SINGLE 3A 400V 400 100A-ifsm 10uA-ir 1.15V-vf SMB 3K/REEL 3 A, 400 V, SILICON, RECTIFIER DIODE
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Diodes Incorporated Diodes, Inc.
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1N1616 1N1615 1N1615R JANTXV1N4459R 1N1614 1N1614R |
Standard Rectifier (trr more than 500ns) Military Silicon Power Rectifier 5 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AA
|
http:// MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
1N1202AR JANTX1N1202A 1N3673AR 1N1202A 1N1204A 1N1 |
Standard Rectifier (trr more than 500ns) Military Silicon Power Rectifier 12 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA
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MICROSEMI CORP-LAWRENCE MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
SDM30008 SDM30016 SDM30004 SDM300 SDM30002 SDM3000 |
300 A, 400 V, SILICON, RECTIFIER DIODE SILICON POWER RECTIFIER Standard Rectifier (trr more than 500ns)
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MICROSEMI CORP-COLORADO MICROSEMI[Microsemi Corporation]
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SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V,温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流 High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) 0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V,温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度,高电压,标准恢复倍流整流(反向电5000V,温25℃时平均整流电流0.4A,高密度,高电压,标准恢复倍增整流器)
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Semtech Corporation Semtech, Corp.
|
VUO52-08NO1 VUO52-16NO1 |
Standard Rectifier Module 3~ Rectifier Bridge Package with DCB ceramic
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IXYS Corporation
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SDR1183 SDR1183R SDR1183RS SDR1183RTX SDR1183S SDR |
35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER 35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
|
Solid States Devices, Inc SOLID STATE DEVICES INC Solid States Devices, I...
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1N2789 1N2134 1N4138 1N2137 1N2458 1N4136 1N2460 1 |
SILICON POWER RECTIFIER Standard Rectifier (trr more than 500ns)
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MICROSEMI CORP-LAWRENCE MICROSEMI[Microsemi Corporation]
|
1N4935RL 1N4007RL |
1A 200V Fast-Recovery Rectifier 1A 1000V Standard Rectifier
|
ON Semiconductor
|
1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns) (1N2xxx) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB (1N4525 - 1N4529) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER
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MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
SDR6WSMSTXV SDR6RAS SDR6RATX SDR6RATXV SDR6RSMSS S |
6A 5 μsec 1400 to 1800 V Standard Recovery Rectifier 6A 5 レsec 1400 to 1800 V Standard Recovery Rectifier
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SSDI[Solid States Devices, Inc]
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