| PART |
Description |
Maker |
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| TPC6901A |
Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type
|
Toshiba Semiconductor
|
| TPCP8H01 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| ZTX649DA ZTX649DB ZTX649DC ZTX749DA |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | CHIP
Transient Voltage Suppressor Diodes 晶体管|晶体管|进步党| 25V的五（巴西）总裁|芯片
TRANSISTOR|BJT|NPN|25VV(BR)CEO|CHIP
TRANSISTOR|BJT|NPN|45VV(BR)CEO|CHIP
|
Fairchild Semiconductor, Corp.
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| FFB2222A FMB2222A MMPQ2222A |
NPN Multi-Chip General Purpose Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| BC847S |
NPN Multi-Chip General Purpose Amplifier
|
Guangdong Kexin Industrial Co.,Ltd
|
| MMDT2222A MMDT2222A-15 |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| UMD3N |
Multi-Chip Digital Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| 585-2325 585-2225 585-2211 585-2413 585-2415 585-2 |
Multi-Chip BASED LED T 1 3/4 Wedge
BASED LEDs-MULTI-CHIP SINGLE COLOR DISPLAY CLUSTER, RED, 5.9 mm
|
Dialight Corporation
Dialight PLC
|
| BUP54 |
NPN MULTI-EPITAXIAL TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
