| PART |
Description |
Maker |
| SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| PRZA-1-10W |
RESISTOR, WIRE WOUND, 10 W, 350; 400 ppm, 1 ohm - 820 ohm, THROUGH HOLE MOUNT RADIAL LEADED
|
Piher Sensors ?Controls SA
|
| RM12F0.0115OHMCT RM12F0.0124OHMCT RM12F0.011OHMCT |
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0115 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0124 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.011 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0113 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0107 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0105 ohm, SURFACE MOUNT, 1206 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0118 ohm, SURFACE MOUNT, 1206 CHIP
|
Cal-Chip Electronics
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| APT4020BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.2; BVDSS (V): 400; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi, Corp.
|
| PHX5N40 |
5.3 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| IRFF230 |
5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| IRFR310 |
1.7 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
VISHAY INTERTECHNOLOGY INC
|
| RFP8P10 |
8A, 100V, 0.400 Ohm, P-Channel Power MOSFET
|
Intersil Corporation
|
| IRFR320BTM IRFR320BTF |
3.1 A, 400 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
