| PART |
Description |
Maker |
| NP32N055ILE NP32N055HLE NP32N055HLE-AZ NP32N055 NP |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
32 A, 55 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
Nch MOS FET for High-current switching
|
Cypress Semiconductor, Corp.
NEC[NEC]
|
| 2SJ540 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK32 |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| RJK03M1DPA-00-J5A RJK03M1DPA-15 |
30V, 50A, 2.3mΩmax.N Channel Power MOS FET
30V, 50A, 2.3mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03M4DPA-00-J5A RJK03M4DPA-15 |
30V, 35A, 4.6mΩmax.N Channel Power MOS FET
30V, 35A, 4.6mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ479 2SJ479L 2SJ479S |
Power switching MOSFET
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK2684 2SK2684L 2SK2684S |
Silicon N Channel DVL MOS FET High Speed Power Switching
SILICON N CHANNEL DV-L MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi Semiconductor
|
| RJJ0101DPD-00-J2 RJJ0101DPD |
5 A, 12 V, 0.093 ohm, P-CHANNEL, Si, POWER, MOSFET MP-3A, SC-63, 3 PIN
P Channel Power MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SK3212 2SK3212-E |
10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
