| PART |
Description |
Maker |
| HSM88ASR |
MPAK package is suitable for high density surface mounting and high speed assembly
|
TY Semiconductor Co., Ltd
|
| UT2316L-AE3-R UT2316-AE3-R |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
N-CHANNEL ENHANCEMENT MODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| VSC7173 VSC7173XYI |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.47 to 7.14; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.47 to 6.73; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
|
Maxim Integrated Products, Inc.
|
| TMP86C822UG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.10 to 3.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TMP86CH22UG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.15 to 4.34; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 8位微控制
|
Toshiba, Corp.
|
| TMP86CH29BUG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 8位微控制
|
Toshiba, Corp.
|
| TMP19A64C1DXBG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.10 to 2.40; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 32位RISC微处理器
|
Toshiba, Corp.
|
| TMP47C103M |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.84 to 5.04; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位MICROCON
|
Toshiba, Corp.
|
| SKDH11507 SKDH115/12 |
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 5; Ic (A): 0.5; hFE: 110 to 190; fT (GHz) typ: 10.5; Cob (pF) max: 2; Package: MPAK 1200 V, SCR
Half Controlled 3-phase Bridge Rectifier
|
Semikron International
|
| 1SMAF4728A 1SMAF4729A 1SMAF4730A 1SMAF4731A 1SMAF4 |
Small plastic package suitable for surface mounted design
Small plastic package suitable for surface mounted design
|
Chendahang Electronics ...
Jiangsu Yutai Electroni...
|
