| PART |
Description |
Maker |
| MJ11016G MJ11015G MJ11012G |
Bipolar Power TO3 NPN 30A 120V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
High-Current Complementary Silicon Transistors
|
Rectron Semiconductor
|
| KSC4010 KSC4010RTU KSC4010OTU KSC4010O |
6 A, 120 V, NPN, Si, POWER TRANSISTOR
Audio Power Amplifier
NPN Epitaxial Silicon Transistor
|
FAIRCHILD SEMICONDUCTOR CORP
|
| NTE2349 |
50 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3
|
|
| STK401-140 STK400-010 STK400-020 STK400-030 STK400 |
Two-Channel AF Power Amplifier ( - Power Supply) 120 W 120 W Minimum, THD = 0.4%
|
SANYO[Sanyo Semicon Device]
|
| BFQ59 BFR14A |
TRANSISTOR | BJT | NPN | 35MA I(C) | TO-120
TRANSISTOR | BJT | NPN | 30MA I(C) | TO-120 晶体管|晶体管|叩| 30mA的一c）|20
|
Honeywell International, Inc.
|
| GM76C256CW GM76C256CLLT-55W |
x8|2.7~5.5V|55/70/85/100/120|Low Power Slow SRAM - 256K x8 | 2.75.5V的| 55/70/85/100/120 |低功耗SRAM的速度 256K
32K X 8 STANDARD SRAM, 120 ns, PDSO28
|
TE Connectivity, Ltd.
HYNIX SEMICONDUCTOR INC
|
| 2N6277 2N6275 2N6274 ON0082 |
POWER TRANSISTORS NPN SILICON
From old datasheet system
100, 120, 140, 150 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
|
| STP200N6F3 STB200N6F3 STB200N6F3TRL |
120 A, 60 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK STripFET Power MOSFET
|
STMicroelectronics
|
| SX15U-24S SX15U SX15U-05S SX15U-12S SX15U-15S |
15 Watt,120 VAC Input Fully Enclosed Switchiing Power Supply
15 Watttt ,,120 VAC IInputt Fulllly Encllosed Swiittchiing Powerr Supplly
|
List of Unclassifed Manufacturers
ETC[ETC]
Volgen Kaga Electronics Inc.
|
| 2SD669AC 2SD669C 2SD669-D-BP |
NPN Silicon Plastic-Encapsulate Transistor
1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
|
Micro Commercial Components
|
| DT18F08KDL-A DT18F08KSB-A DT18F08KDB-A DT18F08KEL- |
40 A, 800 V, SCR MODULE-5
100 A, 800 V, SCR
120 A, 1100 V, SCR
120 A, 1200 V, SCR
120 A, 1300 V, SCR
120 A, 1000 V, SCR
|
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