| PART |
Description |
Maker |
| 2SA1770 2SC4614 2SA1770S 2SC4614S 2SC4614R |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | SIP
High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| GP400LSS12 |
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 10uF; Voltage: 160V; Case Size: 18x20 mm; Packaging: Bulk 400 A, 1200 V, N-CHANNEL IGBT
Single Switch IGBT Module
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| 2SD191810 |
Power Transistor (160V , 1.5A)
|
Rohm
|
| MJE4343 MJE4351 MJE4353 MJE4340 MJE4341 MJE4342 MJ |
POWER TRANSISTORS(16A100-160V125W)
POWER TRANSISTORS(16A /100-160V /125W)
POWER TRANSISTORS(16A,100-160V,125W)
|
MOSPEC[Mospec Semiconductor]
|
| 2SC2383 |
High voltage VCEO 160V
|
Tiger Electronic Co.,Lt...
|
| TIP35D TIP35E TIP35F TIP36D TIP36E TIP36F |
POWER TRANSISTORS(25A,120-160V,125W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| ZXTN5551Z ZXTN5551ZTA |
160V, SOT89, NPN high voltage transistor
|
Diodes Incorporated
Zetex Semiconductors
|
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| 2SB1275 2SB1236A 2SB1236ATV2 2SB1236ATV2P 2SB1236A |
1.5 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Power Transistor (-160V , -1.5A)
Power Transistor ( 160V /1.5A)
1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
ROHM[Rohm]
|
| 2SB1275 |
High breakdown voltage.(BVCEO = -160V) Low collector output capacitance.
|
TY Semiconductor Co., Ltd
|
| 2SA1768 2SC4612 2SC4612R 2SC4612T |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK
High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
