| PART |
Description |
Maker |
| 2SC4667 E000971 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING COMPUTER COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS336 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS196 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS36207 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| L1SS226LT1G L1SS226LT1 |
Ultra High Speed Switching Application
|
LRC[Leshan Radio Company]
|
| L1SS184LT1G L1SS184LT1 |
Ultra High Speed Switching Application
|
LRC[Leshan Radio Company]
|
| 1SS19607 1SS196 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS19307 1SS193 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS352TPH3 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
