| PART |
Description |
Maker |
| STH110N10F7-2 STH110N10F7-6 |
High avalanche ruggedness
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-6 package
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STL8N10LF3 |
N-channel 100 V, 25 mA typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 package
|
STMicroelectronics
|
| STH150N10F7-2 |
N-channel 100 V, 0.0038 Ohm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
|
ST Microelectronics
|
| RTP315N10F7 |
Aerospace and defence N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
|
ST Microelectronics
|
| STI45N10F7 |
N-channel 100 V, 0.013 Ohm typ., 45 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in I2PAK package
|
ST Microelectronics
|
| STH185N10F3-2 |
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET(TM) III Power MOSFET H2PAK-2 package
|
ST Microelectronics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| STH80N10F7-2 STD80N10F7 |
Ultra low on-resistance
N-channel 100 V, 0.008 Ohm typ., 80 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STP45N65M5 STW45N65M5 STB45N65M5 STF45N65M5 |
N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET
N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
|
STMicroelectronics
|
| STU6N65K3 STF6N65K3 STFI6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
|
STMicroelectronics
ST Microelectronics
|
| 2SC3356 |
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
|
TY Semiconductor Co., Ltd
|
