| PART |
Description |
Maker |
| HL6339G |
(HL6342G) 633nm Lasing Laser Diode
|
Hitachi
|
| SLD114VS |
Index-Guided AlGaAs Laser Diode
|
SONY
|
| SLD114VS |
Index-Guided AlGaAs Laser Diode
|
SONY[Sony Corporation]
|
| SLD238VL |
Index-Guided High Power AlGaAs Laser Diode
|
SONY[Sony Corporation]
|
| RLD-78MC |
Laser Diodes > For Laser Printers, Sensoers > For Sensors and General Purpose Measuring Equipment
AlGaAs Laser Diodes(铝砷化镓激光二极管)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE
785 nm, LASER DIODE
807 nm, LASER DIODE
798 nm, LASER DIODE
|
|
| NX7535BN-AA NX7535AN-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX6511GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
