| PART |
Description |
Maker |
| MSM514256A-10ZS MSM514256A-70RS MSM514256A-80RS |
256K X 4 FAST PAGE DRAM, 100 ns, PZIP19
256K X 4 FAST PAGE DRAM, 70 ns, PDIP20
256K X 4 FAST PAGE DRAM, 80 ns, PDIP20
|
OKI ELECTRIC INDUSTRY CO LTD
|
| MN414260CTT |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40
|
PANASONIC CORP
|
| UPD424190ALE-70 UPD424190AG5M-70 |
256K X 18 FAST PAGE DRAM, 70 ns, PDSO40
|
|
| V53C104DK80 |
256K X 4 FAST PAGE DRAM, 80 ns, PDSO20
|
MOSEL-VITELIC
|
| M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位（16777216 - Word位）动态随机存储器
4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronics
Samsung semiconductor
|
| HM51W4160ALTT-10 HM51W4160ATT-10 |
256K X 16 FAST PAGE DRAM, 100 ns, PDSO40
|
|
| TC514256AJ-10EL |
256K X 4 FAST PAGE DRAM, 100 ns, PDSO20
|
|
| LC32464M-80 LC32464P |
256K (65536 words X 4 bits) DRAM Fast Page Mode
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| HYB3116400BJ-60 HYB3116400BJ-50 HYB3117400BJ-50 HY |
3.3V 4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 50 ns, PDSO26
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, TSOP2-26/24
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, SOJ-26/24
|
SIEMENS AG
Infineon Technologies AG
http://
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
