| PART |
Description |
Maker |
| NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| FMKA130 FMKA130NL |
1.0 Schottky Power Rectifier
1.2 Watt Power Dissipation Package 1.0 Ampere, Forward Voltage Less than 600mV
1.2 Watt Power Dissipation Package 1.0 Ampere/ Forward Voltage Less than 600mV
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| BZT03C20 BZT03C200 BZT03D130 BZT03C10 BZT03C180 BZ |
POWER DISSIPATION: 3.25 W
|
Shenzhen Luguang Electronic Technology Co., Ltd
Shenzhen Luguang Electronic...
Shenzhen Luguang Electr...
|
| KTC601U |
Power dissipation: PC=200mW
|
TY Semiconductor Co., Ltd
|
| BUZ83A |
SOA is Power Dissipation Limited
|
Inchange Semiconductor ...
|
| KTA1663 |
Collector Power Dissipation: PC=500mW
|
TY Semiconductor Co., Ltd
|
| BUX21A |
HIGH POWER DISSIPATION TRANSISTOR
|
Comset Semiconductors
|
| 2SB766A |
Large collector power dissipation PC
|
MAKO SEMICONDUCTOR CO.,...
|
