| PART |
Description |
Maker |
| FDS6612AD84Z |
8400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| MCP3204-BISL MCP3204-CIST MCP3204-CIP MCP3204-BIP |
2.7V 4-Channel/8-Channel 12-Bit A/D Converters with SPI Serial Interface 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
TWIST-LOK 2.93,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
CBS SCREW-MOUNT NYLON 3/4,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
TWIST-LOK 2.68,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| MPAT-02000220-3706 MPAT-10701250-6020 MPAT-0750085 |
2000 MHz - 2200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
2100 MHz - 2700 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX
17700 MHz - 20200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
| SUB75N08-10 SUP75N08-10 |
N-Channel Enhancement-Mode Trans
N-Channel 75-V (D-S), 175C MOSFET
N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET
N-Channel 75 N通道75
|
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
|
| SLA5018 |
N-channel P-channel H-bridge 5 A, 60 V, 0.3 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
| PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
| UT4812Z UT4812ZG-S08-R |
DUAL N-CHANNEL ENHANCEMENT MODE
30 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE, SOP-8
|
Unisonic Technologies Co., Ltd.
|
| SIZ702DT-T1-GE3 |
N-Channel 30-V (D-S) MOSFETs
13.8 A, 30 V, 0.012 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR-6
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| DMN5L06VAK DMN5L06VK-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 280 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Inc.
Diodes, Inc.
|
| FDC6420 FDC6420C FDC6420CD84Z |
20V N & P-Channel PowerTrench MOSFETs
3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
|
