| PART |
Description |
Maker |
| ARF447 ARF446 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 250W 65MHz
N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
| STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STP5NB40 STP5NB40FP 5321 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| TN2410L VN2406E |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电40V，夹断电.18AN沟道增强型MOSFET晶体
N-Channel Enhancement-Mode MOSFET(???婕???荤┛?靛?40V锛?す???娴?.18A??娌??澧?己??OSFET?朵?绠?
|
Vishay Intertechnology,Inc.
|
| APM3095PUC-TU APM3095PUC-TUL APM3095PUC-TRL |
P-Channel Enhancement Mode MOSFET 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252
P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics Corporation
Anpec Electronics, Corp.
|
| CMLDM7002A CMLDM7002AJ |
SMD Small Signal Mosfet Dual N-Channel Enhancement Mode
SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
CENTRAL[Central Semiconductor Corp]
|
| TN2010T |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电00V，夹断电.12AN沟道增强型MOSFET晶体
N-Channel Enhancement-Mode MOSFET Transistor
|
Vishay Intertechnology,Inc.
ETC
|
| ARF475LF ARF475FL |
N-CHANNEL ENHANCEMENT MODE POWER MOSFETs
From old datasheet system
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
|
ADPOW
Advanced Power Technology
|
| IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STN2N10L 4585 |
N-Channel Enhancement Mode Power MOS Transistor(Ｎ沟道增强模式功率ＭＯＳ晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率马鞍山晶体管
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
STMicroelectronics N.V.
ST Microelectronics
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| ZXMP3A16DN8TC ZXMP3A16DN8 ZXMP3A16DN8TA |
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET 双P沟道增强型MOSFET0V
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET 4200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
