| PART |
Description |
Maker |
| SG20N12DT SG20N12T |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG7N06DP SG7N06P |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG75S12S |
Discrete IGBTs
|
Sirectifier Semiconductors
|
| SG15N12DP SG15N12P |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG23N06DT SG23N06T |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG50N06D2S |
(SG50N06D2S / SG50N06D3S) Discrete IGBTs
|
Sirectifier Semiconductors
|
| IXBF40N160 IXBF40N140 |
Discrete IGBTs
High Voltage BIMOSFET
|
IXYS Corporation
|
| IXBN75N170A |
Discrete IGBTs
BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
| IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E30 |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220
HighSpeed 2-Technology
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| 2SH30 |
Silicon N Channel IGBT High Speed Power Switching
IGBTs
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
