| PART |
Description |
Maker |
| FCX591 |
Power Collector dissipation: PC=1W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
| KTA1663 |
Collector Power Dissipation: PC=500mW
|
TY Semiconductor Co., Ltd
|
| KTC4379 |
Collector Power Dissipation: PC=500mW
|
TY Semiconductor Co., L...
|
| FMMT619 |
Collector current:IC=2A, power dissipation :PC=625mw
|
TY Semiconductor Co., Ltd
|
| FMMT624 |
Collector current:IC=1A, Power dissipation :PC=625mW
|
TY Semiconductor Co., Ltd
|
| 2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
| FMMT617TA |
Power Dissipation: Ptot=625mW, Collector Current: IC=3A
|
TY Semiconductor Co., Ltd
|
| 2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| SMCJ6.0C SMCJ58CA SMCJ26CA SMCJ75CA SMCJ60C SMCJ16 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
GT 7C 7#12 SKT RECP WALL
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.55W; C-E Breakdown Voltage:32V; DC Current Gain Min (hfe):60; Collector Current:1A; DC Current Gain Max (hfe):175; Power (Ptot):550mW
|
Bytes
|
| UPD75217GF UPD75217CW |
POWER DISSIPATION
|
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