PART |
Description |
Maker |
1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 2000 V, SILICON, SIGNAL DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE
|
|
1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35 0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34 0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35 0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34 0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
|
|
1N4148L-CA2-R 1N4148L-CB2-R 1N4148L-AL3-R 1N4148L- |
HIGH-SPEED SWITCHING DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE HALOGEN FREE, PLASTIC PACKAGE-3 0.2 A, 100 V, SILICON, SIGNAL DIODE LEAD FREE, PLASTIC PACKAGE-3 0.2 A, 100 V, SILICON, SIGNAL DIODE LEAD FREE, PLASTIC PACKAGE-2
|
Unisonic Technologies Co., Ltd. UNISONIC TECHNOLOGIES CO LTD
|
BYM06-400 BYM06-600 BYM06-100 BYM06-50 |
0.5 A, 400 V, SILICON, SIGNAL DIODE 0.5 A, 600 V, SILICON, SIGNAL DIODE 0.5 A, 100 V, SILICON, SIGNAL DIODE 0.5 A, 50 V, SILICON, SIGNAL DIODE
|
Vishay Intertechnology, Inc. Spacecraft Components, Corp.
|
CRSH1-4 CRSH1-10 CRSH1-6 CRSH1-8 CRSH1-2 CRSH1-5 |
SCHOTTKY BARRIER RECTIFIER 1.0 AMPS, 20 THRU 100 VOLTS 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Central Semiconductor Corp. Central Semiconductor, Corp.
|
SK12 SK15 SK14 S110 SK19 SK16 |
1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AA SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA
|
Pan Jit International Inc.
|
CT38 CT24 |
0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.1 A, 150 V, SILICON, SIGNAL DIODE, DO-35
|
|
MBRS1100TRPBF MBRS190TRPBF MBRS1100TR MBRS190TR |
1 A, 90 V, SILICON, SIGNAL DIODE, DO-214AA SCHOTTKY RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA
|
IRF[International Rectifier] VISHAY SEMICONDUCTORS
|
U1BC44 |
0.9 A, 100 V, SILICON, SIGNAL DIODE
|
|
BCX79-IX BCX79-VII BCX79-VIII BCX79-X Q62702-C718 |
From old datasheet system PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 RES,SMC,681,0HM,1/4W/1%,1 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 自动对焦进步党硅晶体管(高电流增益低集电极发射极饱和电压
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
|