| PART |
Description |
Maker |
| CBR06C160FAGAC |
CBR-SMD RF C0G, Ceramic, High Q, 16 pF, 1%, 250 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR02C110F5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 11 pF, 1%, 50 V, 0201, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR06C169B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 1.6 pF, /-0.1 pF, 50 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR04C119B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 1.1 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR04C259B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 2.5 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR04C269B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 2.6 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR04C179B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 1.7 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44
CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100
CRYSTAL 20.0 MHZ 20PF SMD
RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM
3.3V In-System Programmable High Density SuperFAST PLD
3.3V In-System Programmable High Density SuperFAST⑩ PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
280 MHz 3.3V in-system prommable superFAST high density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| CT1008HQF CT1008HQF-10NG CT1008HQF-10NJ CT1008HQF- |
1 ELEMENT, 0.056 uH, GENERAL PURPOSE INDUCTOR, SMD
SMD Wire-wound Chip Inductors - High Q
|
http://
Central Technologies
|
| CZTA42 CZTA92 |
SMD Small Signal Transistor PNP High Voltage
SMD Small Signal Transistor NPN High Voltage
SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| SRR1206-5R0ML SRR1206-121YL SRR1206-150ML SRR1206- |
Shielded High Power Inductors 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Shielded High Power Inductors 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Shielded High Power Inductors 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Shielded High Power Inductors 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Shielded High Power Inductors 1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Shielded High Power Inductors 1 ELEMENT, 1500 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Shielded High Power Inductors 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Shielded High Power Inductors 1 ELEMENT, 560 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Shielded High Power Inductors 1 ELEMENT, 1000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Shielded High Power Inductors 1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Shielded High Power Inductors 1 ELEMENT, 2.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc.
Bourns, Inc.
|
|
