| PART |
Description |
Maker |
| MG360V1US41 E002277 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| BTA12-800C BTB12-600BWRG BTB12-600BRG BTB12-600CWR |
800 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
TRIAC,800V V(DRM),12A I(T)RMS,TO-220
250MHz Wideband Transconductance Amplifier with Differential Output
330mW, Ultra-Small, Audio Power Amplifiers with Shutdown
12A TRIACS 2A双向可控
12A TRIACS 12A双向可控
|
ST Microelectronics
Philips
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| 2SD1047 2SD1047E |
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-247VAR 晶体管|晶体管| npn型| 140伏特五（巴西）总裁| 12A条一（c）|47VAR
POWER TRANSISTORS(12A/140V/100W)
POWER TRANSISTORS(12A,140V,100W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| MIC4452BM MIC4452BN MIC4452CT MIC4451 MIC4451BM MI |
12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
|
MICREL[Micrel Semiconductor]
|
| BT138-600 BT138-600F BT138-600G BT138-500/B BT138- |
TRIAC 12A SOT-186A
TRIAC 12A/600V
TRIAC 12A/500V
Triacs
|
Philips Semiconductors
|
| FMKA130 FMKA130NL |
1.0 Schottky Power Rectifier
1.2 Watt Power Dissipation Package 1.0 Ampere, Forward Voltage Less than 600mV
1.2 Watt Power Dissipation Package 1.0 Ampere/ Forward Voltage Less than 600mV
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| MIC4421A MIC4421AAM MIC4421ABM MIC4421ABN MIC4421A |
High peak-output current: 9A Peak (typ.)
9A Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
|
MIC GROUP RECTIFIERS
Micrel Semiconductor
|
| MMBD2836 |
Power dissipation
|
SK Electronics
|
| UPD75217CW UPD75217GF |
POWER DISSIPATION
|
ETC
|
| 1N2169 1N2164A 1N2171 1N2167 1N2165A 1N2170A 1N216 |
Power Dissipation
|
New Jersey Semi-Conductor P...
|
