| PART |
Description |
Maker |
| AD535JH |
Internally Trimmed
Integrated Circuit Divider
|
AD
|
| AD534TE/883B AD534SE/883B |
Internally Trimmed Precision IC Multiplier
|
Analog Devices
|
| AD632TH/883B AD632SD/833B AD632BH AD632TD/883B AD6 |
Internally Trimmed Precision IC Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, MBCY10
Internally Trimmed Precision IC Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, CDIP14
|
Analog Devices, Inc.
http://
|
| AD632AH AD632BD AD632SH AD632TH AD632SD AD632BH AD |
-8 - -18V; 4-6mW; internally trimmed precision IC multiplier. For high guality analog signal processing
|
AD[Analog Devices]
|
| MAX1458AAE MAX1458CAE MAX1458C_D MAX1458 1868 |
From old datasheet system
1%-Accurate Digitally Trimmed Sensor Signal Conditioner
1%-Accurate, Digitally Trimmed Sensor Signal Conditioner
|
Maixm
MAXIM[Maxim Integrated Products]
|
| SP3843 |
Trimmed Oscillator Discharge Current for Precise Duty Cycle Control
|
TY Semiconductor Co., Ltd
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT
40 个字x 1 线5 x 7 点阵字符和光
N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| MGFC26V5964A MGFC36V5964A MGFC36V59964A |
5.9-6.4 GHz BAND 4W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
5.9-6.4GHz band 4W internally matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK25V4045 K254045 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 0.3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
