| PART |
Description |
Maker |
| 2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SC4104 |
High fT. Small reverse transfer capacitance. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA1416 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
| 2SA1417 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
| VPA07 VPA18 VPA05 VPM06 VPM07 VPM05 VPH06 VPA25 VP |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
Hybrid intergrated circuits/with FBET/LSBT process chips/Wide bandwidth video output ICs
|
SANYO[Sanyo Semicon Device]
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| PI5A4764GAE PI5A4764 |
Smal Package, Dual SPDT Audio Clickless Analog Switch
|
PERICOM[Pericom Semiconductor Corporation]
|
| MB85R256G |
256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies
|
http://
|
| RN4608 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| IRF3205LTRR IRF3205S IRF3205STRR |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
Advanced Process Technology
|
International Rectifier
|
