| PART |
Description |
Maker |
| UPD45128163G5-A75L-9JF UPD45128841G5-A75L-9JF UPD4 |
128M-bit Synchronous DRAM 4-bank/ LVTTL
128M-bit Synchronous DRAM 4-bank, LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| HM5212165F HM5212805FLTD-B60 |
128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) 128MLVTTL接口的SDRAM28MLVTTL接口同步的DRAM
SYNCHRONOUS DRAM, PDSO54
|
Fairchild Semiconductor, Corp.
|
| M2V28S20ATP-6L M2V28S30ATP-6L M2V28S40ATP-6L M2V28 |
128M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V28S40ATP-7L M2V28S30ATP-7L M2V28S20ATP-7L M2V28 |
128M Synchronous DRAM 128M的同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| UPD45128163-A75L |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory, Inc.
|
| UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9J |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
NEC[NEC]
|
| M2S28D20 M2S28D20ATP M2V28D20ATP-10 M2V28D20ATP-75 |
128M Double Data Rate Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EBS11RC4ACNA-7A EBS11RC4ACNA EBS11RC4ACNA-75 |
1 GB Registered SDRAM DIMM 128M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
http://
ELPIDA[Elpida Memory]
Elpida Memory, Inc.
DRAM
|
| EBE10UE8ACFA-8E-E |
128M X 64 SYNCHRONOUS DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Elpida Memory, Inc.
|
| UPD45128163G5-A80T-9JF UPD45128163G5-A10T-9JF UPD4 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
