PART |
Description |
Maker |
W3HG2128M72EER534D4MG |
256M X 72 MULTI DEVICE DRAM MODULE, ZMA200
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
MD32256FKXI-10/AD6 |
256K X 32 MULTI DEVICE DRAM MODULE, 100 ns, PDIP48
|
|
MH8M36CNJ-6 MH4M365CXJ-6 MH16M36BJ-6 |
8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 SIMM-72 4M X 36 MULTI DEVICE DRAM MODULE, 60 ns, DMA72 16M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
|
Qimonda AG
|
HY5DU56422ALT-K HY5DU56422ALT-J HY5DU56822ALT-J HY |
256M-S DDR SDRAM 64M X 4 DDR DRAM, 0.7 ns, PDSO66 256M-S DDR SDRAM 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
MF18M1-L18AT |
8M X 32 MULTI DEVICE DRAM CARD, 80 ns, XMA88 CARD-88
|
Micross Components
|
M2V56S20ATP M2V56S20ATP-5 M2V56S20ATP-6 M2V56S20AT |
256M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M2V56S20TP-8 M2V56S40TP-8 M2V56S30TP-8 |
256M synchronous DRAM
|
Mitsubishi Electric Corporation
|
MT41K256M4JP-125G |
256M X 4 DDR DRAM, PBGA78
|
|
M2V56S40TP M2V56S20TP-6 M2V56S20TP M2V56S20 |
256M Synchronous DRAM From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|