PART |
Description |
Maker |
APT30GT60CR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 30A
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Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
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APT12GT60KR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 25A
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Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
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APT15GT60BR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 31A
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ADPOW[Advanced Power Technology]
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APT60GT60JR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 90A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
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ADPOW[Advanced Power Technology]
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APT60GT60BR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 116A
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ADPOW[Advanced Power Technology]
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APT40GF120JRD |
The Fast IGBTis a new generation of high voltage power IGBTs ⑩的快速IGBT是一种高压IGBT的新一 The Fast IGBT is a new generation of high voltage power IGBTs Fast IGBT & FRED 1200V 60A
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Advanced Power Technology, Ltd.
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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APT40GT60BR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 80A
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ADPOW[Advanced Power Technology]
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APT50M50L2FLL |
POWER MOS 7 500V 89A 0.050 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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Advanced Power Technology, Ltd.
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APT5010B2LL |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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Microsemi Corporation
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APT8014L2LL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 800V 52A 0.140 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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Advanced Power Technology http://
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