PART |
Description |
Maker |
FGW50N60HD |
Discrete IGBT (High-Speed V series) 600V / 50A
|
Fuji Electric
|
STGW50NB60M 9107 |
N-CHANNEL 50A - 600V - TO-247 PowerMESH??IGBT N-CHANNEL 50A - 600V - TO-247 PowerMESH?/a> IGBT N-CHANNEL 50A - 600V - TO-247 POWERMESH IGBT From old datasheet system N-CHANNEL 50A - 600V - TO-247 PowerMESH⑩ IGBT
|
??????浣? STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
6MBI50F-060 |
IGBT(600V 50A)
|
Fuji Electric
|
7MBR50SA060 |
IGBT(600V/50A/PIM)
|
FUJI[Fuji Electric]
|
STGW50NB60M |
N-CHANNEL 50A - 600V - TO-247 POWERMESH IGBT
|
ST Microelectronics
|
FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条) INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A) 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
FGW35N60HD |
Discrete IGBT (High-Speed V series) 600V / 35A
|
Fuji Electric
|
FGW75N60HD |
Discrete IGBT (High-Speed V series) 600V / 75A
|
Fuji Electric
|
RJP60F5DPM-15 |
600V - 40A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
RJH60F5BDPQ-A0 |
600V - 40A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|