| PART |
Description |
Maker |
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| BFP640 |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA
|
Infineon
|
| NESG220033 NESG220033-A NESG220033-T1B NESG220033- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
| BFP750-15 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies A...
|
| NESG240034-T1 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
Renesas Electronics Corporation
|
| NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|
| NESG2031M05-T1-A NESG2031M05-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
| NESG2030M04-T2 NESG2030M04 |
NONLINEAR MODEL
NPN SiGe HIGH FREQUENCY TRANSISTOR
NPN SiGe HIGH FREQUENCY TRANSISTOR npn型硅锗高频晶体管
|
NEC[NEC]
NEC, Corp.
|
| THN4501E THN4501U THN4501Z |
SiGe NPN Transistor
|
AUK corp
|
| THN6301KF THN6301U THN6301S THN6301E THN6301Z |
SiGe NPN Transistor
|
AUK corp
|
