| PART |
Description |
Maker |
| IRFB3307ZGPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB4310ZGPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRLRU3103PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFH5020TR2PBF IRFH5020TRPBF IRFH5053PBF IRFH5053T |
HEXFETPower MOSFET
3 Phase Boost Converter Applications
9.3 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
| IR710PBF INTERNATIONALRECTIFIER-IR710PBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
|
| IRLML2030TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Easier manufacturing
|
TY Semiconductor Co., Ltd
|
| IRFML8244TRPBF |
HEXFETpower MOSFET Multi-vendor compatibility Easier manufacturing Easier manufacturing
|
TY Semiconductor Co., Ltd
|
| IRF7831 |
HEXFETPower MOSFET
HEXFETPower MOSFET
HEXFET Power MOSFET
|
IRF[International Rectifier]
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
Infineon Technologies AG
IXYS CORP
IXYS Corporation
|
