PART |
Description |
Maker |
MID400-12E4T |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
CM100DU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE 100 A, 1700 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
SEMIX202GB128DS08 |
SPT IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
Semikron International http://
|
SEMIX202GB066HDS08 |
Trench IGBT Modules 270 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
SEMIX252GB126HDS |
Trench IGBT Modules 270 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
SEMIX303GB12E4S |
Trench IGBT Modules 466 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
SEMIX503GB126HDS |
Trench IGBT Modules 480 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|