| PART |
Description |
Maker |
| 2SA1724 |
High fT (fT = 1.5GHz typ). High Current (IC = 300mA). Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SB1122 |
Adoption of FBET process Very small size making it easy to provide highdensity hybrid ICS
|
TY Semiconductor Co., L...
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| 2SC5930 |
Silicon NPN Triple Diffused Type (PCT Process) High-Speed and High-Voltage Switching Applications
|
Toshiba Semiconductor
|
| 2SA1452A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED High Current Switching Applications
|
TOSHIBA
|
| SI9140CQ SI9140DQ SI9140 SI9140CY SI9140DY |
SMP Controller For High Performance Process Power Supplies
|
VISAY[Vishay Siliconix]
|
| ATL35 |
The ATL35 series ASIC family is fabricated on a 0.35 micron CMOS process with up to four levels of metal. This family features arrays with up to 2.7 million routable gates and 976 pins. The high density and high pin count capabilities of t
|
Atmel
|
| KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
| SR10100 SR1060 |
10 Amp High Voltage SCHOTTKY BARRIER RECTIFIERS SUPERIOR METAL PROCESS
|
First Components International
First Components Intern...
|
