PART |
Description |
Maker |
2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
2SC4616 |
Large current calcity (IC=2A) High blocking voltage(VCEO 400V)
|
TY Semiconductor Co., Ltd
|
2SC5161 |
High breakdown voltage.VCEO = 400V NPN silicon transistor
|
TY Semiconductor Co., Ltd
|
2SB1220 |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
2SD814A |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
2SB805 |
High collector to emitter voltage: VCEO -100V.
|
TY Semiconductor Co., Ltd
|
2SC5161 A5800387 2SC3969 |
High Voltage Switching Transistor(400V, 2A) High Voltage Switching Transistor (400V, 2A) From old datasheet system
|
ROHM[Rohm]
|
BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.
|
Continental Device India Limited
|
2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
HER301 HER305 HER302 HER303 HER304 |
HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V) HIGH EFFICIENCY RECTIFIERS(3.0A/50-400V) 28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
MOSPEC[Mospec Semiconductor] MOSPEC SEMICONDUCTOR CORP.
|
BF422BPL |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|