PART |
Description |
Maker |
NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp. NEC[NEC]
|
FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited Sumitomo Electric Industries, Ltd.
|
FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET X-Band Internally Matched FET
|
Eudyna Devices Inc SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor Toshiba Corporation
|
AFM08P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET Ka Band Power GaAs MESFET Chip
|
Alpha Industries, Inc. ALPHA[Alpha Industries] Alpha Industries Inc
|
NEZ7785-15DD |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
ELM5964-4PST |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
|
FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
FUJITSU LTD
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CF739E6433 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
TRIQUINT SEMICONDUCTOR INC
|
|