PART |
Description |
Maker |
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
3SK241 |
GaAs N-Channel MES FET
|
Panasonic Semiconductor
|
3SK166 3SK166A 3SK166A-0 3SK166A-2 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET 砷化镓N沟道双栅场效应晶体管
|
Sony Corporation Sony, Corp.
|
3SK147 |
GAAS N-CHANNEL DUAL-GATE MES FET
|
Sony Corporation
|
3SK148 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
SWD-109TR SWD-119TR SWD-109119 SWD-109RTR SWD-119R |
Single/quad driver for GaAs FET switche and attenuator Single/Quad Drivers for GaAs FET Switches and Attenuators
|
MA-Com Tyco Electronics
|
FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited Sumitomo Electric Industries, Ltd.
|
NE3521M04-T2B-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
NE71300-N NE71300-M NE71300-L NE713 NE71383B |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
NE3521M04-T2B-A NE3521M04-T2-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|