| PART |
Description |
Maker |
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| APT40M70B2VFRG APT40M70LVFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-264 [L]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| APT4014BVFR APT4014SVFR APT4014BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 28; RDS(on) (Ohms): 0.14; BVDSS (V): 400; 28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
http://
|
| SPH-20.13OHM5 SPH-20.11OHM5 SPH-20.16OHM5 SPH-20.1 |
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.13 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.11 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.16 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.15 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 47 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.051 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 1000 ppm, 0.091 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 1300 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 3.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.33 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.36 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.39 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 56 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 82 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 1.1 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 4.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 68 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 1.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.43 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 2.4 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
IRC Advanced Film
|
| FRM244D FN3230 FRM244R FRM244H |
12A/ 250V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs
12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| PHX5N40 |
5.3 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| BUZ32 |
9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| RFP8P10 |
8A, 100V, 0.400 Ohm, P-Channel Power MOSFET
|
Intersil Corporation
|
| IRF730 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY INTERTECHNOLOGY INC
|
| DF340JAAEHSB DF340JAAEHD1B |
10 A, 400 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
SOLITRON DEVICES INC
|
| IRFR320BTM IRFR320BTF |
3.1 A, 400 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
