PART |
Description |
Maker |
2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET MOS Field Effect Transistor N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
RJK03M2DPA RJK03M2DPA-15 |
N Channel Power MOS FET High Speed Power Switching 30V, 45A, 2.8mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SJ541 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
2SK2414 2SK2414-Z 2SK2414-Z-T1 2SK2414-Z-E1 2SK241 |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业 Low withstand voltage Nch MOS FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
RJK03M1DPA-00-J5A RJK03M1DPA-15 |
30V, 50A, 2.3mΩmax.N Channel Power MOS FET 30V, 50A, 2.3mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SK2736 |
Silicon N Channel DVL MOS FET High Speed Power Switching Silicon N Channel DV-L MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
RJK5012DPP-00-T2 RJK5012DPP |
12 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Silicon N Channel MOS FET High Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
RJK4013DPE09 RJK4013DPE-00-J3 RJK4013DPE-09 |
Silicon N Channel MOS FET High Speed Power Switching 17 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK-3
|
Renesas Electronics Corporation Renesas Electronics, Corp.
|
2SK3212 2SK3212-E |
10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|