| PART |
Description |
Maker |
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
| 2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
| 2SB1219A |
Large collector current IC. Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
| KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current
PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| KSD1691 KSD1691OS KSD1691YS KSD1691GS KSD1691YSTST |
NPN Epitaxial Silicon Transistor
Low Collector-Emtter Saturation Voltage & Large Collector Current
Feature
|
Fairchild Semiconductor
|
| FS400R07A1E3 |
DC-collector current / diode forward current limited by power terminals
|
Infineon Technologies AG
|
| HC5503C HC5503CCB HC5503CCP |
Unbalanced PBX/Key System SLIC, Subscriber Line Interface Circuit
Unbalanced PBX/Key System SLIC/ Subscriber Line Interface Circuit
Bipolar Transistor; Collector Emitter Voltage, Vceo:50V; Transistor Polarity:NPN; Power Dissipation:900mW; DC Current Gain Min (hfe):180; Collector Current:500A; Package/Case:3-TO-92
|
INTERSIL[Intersil Corporation]
|
| BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益（为自动
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
