| PART |
Description |
Maker |
| 2SC4080 |
High Ft High breakdown voltage Small reverse transfer capacitance excellent
|
TY Semiconductor Co., Ltd
|
| 2SC4104 |
High fT. Small reverse transfer capacitance. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| BYS459F-1500 BYS459-1500 BYS459B-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns
|
VISAY[Vishay Siliconix]
|
| SD103AWS |
350mA Small Single Surface Mounted Schottky Diode Low Reverse Capacitance
|
First Components Intern...
|
| 2SA2082 |
Small-signal device - Small-signal transistor - High-Speed Switch·VCO and High Freq.
|
Panasonic
|
| 2SA1739 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| SLG7NT614VTR |
Ultra-small 22 mΩ 4 A Load Switch with Reverse Current Blocking
|
Dialog Semiconductor
|
| BYW29-50 BYWB29-50 BYWF29-50 BYW29-100 BYW29-150 B |
Ultrafast Rectifiers, Forward Current 8.0A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V
|
Vishay
|
| FR011L5J |
Low-Side Reverse Bias / Reverse Polarity Protector
|
Fairchild Semiconductor
|
| 74AUP1G32GW125 |
Low-power 2-input OR gate; Package: SOT353-1 (TSSOP5); Container: Reel Pack, Reverse, Reverse
|
NXP SEMICONDUCTORS
|
| RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五（DRM）的|00VAR84
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
