| PART |
Description |
Maker |
| UPSC100 |
Silicon Carbide (SiC) Schottky
|
Microsemi
|
| SML10SIC06Y |
SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
Seme LAB
|
| SML10SIC06YC |
SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
Seme LAB
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| AM27C128 AM27C128-120 AM27C128-120DC AM27C128-120D |
112dB 192kHz 24-BIT SCH DAC
128 Kilobit (16 K x 8-Bit) CMOS EPROM
Octal D-Type Flip-Flops With Clear 20-PDIP 0 to 70
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 90 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 120 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 55 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 OTPROM, 90 ns, PDIP28
Quad 2-input exclusive-NOR gates with open collector outputs 14-SO 0 to 70 16K X 8 OTPROM, 120 ns, PDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 OTPROM, 120 ns, PQCC32
112dB 192kHz 24-BIT SCH DAC 一一二分92kHz4位三星援
Quad /S-/R latches 16-SOIC 0 to 70 一一二分92kHz4位三星援
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 250 ns, CDIP28
Triple 3-input positive-NOR gates 14-SOIC 0 to 70
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| Q67040S4647 SDT08S60 |
Silicon Carbide Schottky Diodes - 8A diode in TO220-2 package
Thinq SiC Schottky Diode
|
Infineon Technologies AG
|
| SDT10S60 |
Silicon Carbide Schottky Diode 碳化硅肖特基二极
From old datasheet system
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon Technologies AG
|
| FBS10-06SC IXYSCORP-FBS10-06SC |
Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC 3 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| 0405SC-1000M MICROSEMIPOWERPRODUCTSGROUP-0405SC-10 |
SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 UHF BAND, Si, N-CHANNEL, RF POWER, JFET
1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
|
Microsemi, Corp.
Microsemi Corporation
|
| SIDC16D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| APT2X30DC60J APT2X31DC60J |
Dual SiC Diode Module
|
Microsemi
|
| APT2X61DC120J |
Dual SiC Diode Module
|
Microsemi
|
