PART |
Description |
Maker |
APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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SUD50N02-11P |
N-Channel 20-V (D-S) 175C MOSFET N-Channel 20-V (D-S) 175∩ MOSFET N-Channel 20-V (D-S) 175隆? MOSFET N-Channel 20-V (D-S) 175?/a> MOSFET
|
Vishay Siliconix
|
SUD40N06-25L |
N-Channel Enhancement-Mode Trans, Logic Level N-Channel 60-V (D-S), 175C MOSFET, Logic Level N-Channel 60-V (D-S) 175C MOSFET Logic Level
|
VISAY[Vishay Siliconix]
|
TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N Channel enhancement MOS FET
|
NEC Corp. NEC[NEC]
|
2SK3577 2SK3577-T1B 2SK3577-T2B |
N Channel enhancement MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开 From old datasheet system N-channel MOS type field effect transistor
|
NEC, Corp. NEC[NEC]
|
SUB70N06-14 SUP70N06-14 |
N-Channel Enhancement-Mode Trans N-Channel 60-V (D-S), 175 Degree Celcious MOSFET
|
Vishay Intertechnology,Inc.
|
UPA1870B UPA1870BGR-9JG UPA1870BGR-9JG-E1 UPA1870B |
N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC] NEC Corp.
|
NTF3055L175T1 NTF3055L175T1G |
Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-223; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 2 A, 60 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET 2.0 A, 60 V, Logic Level 2 A, 60 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
ON Semiconductor
|
2SK2360 2SK2359 TC-2501 2SK2359-Z |
N-channel enhancement type DMOS From old datasheet system MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
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