| PART |
Description |
Maker |
| AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120W |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes
x8 Flash EEPROM
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
|
Advanced Linear Devices, Inc.
|
| PT7A7515 PT7A7513 PT7A7535 PT7A7531 |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:67A; On-Resistance, Rds(on):7.9mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:D2PAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
3.08V Reset Active Low Supervisor
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
|
| 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix
Vishay Intertechnology,Inc.
|
| KI1902DL |
Drain-source voltage Vds 20V Gate-source voltage Vgs -12V
|
TY Semiconductor Co., L...
|
| ST26C32 ST26C32CF16 ST26C32CP16 ST26C32IF16 ST26C3 |
QUAD RS-422, RS-423 CMOS Differential Line Receiver LINE RECEIVER, PDSO16
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:13.4A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC; Leaded Process Compatible:No
|
Exar, Corp.
EXAR[Exar Corporation]
|
| ECH8668 |
Power MOSFET, 20V, 7.5A, 17mOhm, -20V, -5A, 38mOhm, Complementary Dual ECH8
|
ON Semiconductor
|
| CDBF0320-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=20V, V-R=20V, I-O=0.35A
|
Comchip Technology
|
| ITF87068SQT |
9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P沟道2.5V专用功率MOS场效应管)
|
Intersil Corporation
|
| GFC360 |
N Channel Power MOSFET with high VDS
|
Gunter Seniconductor GmbH.
|
| CDBK0520L |
Small Signal Schottky Diodes, V-RRM=20V, V-R=20V, I-O=500mA
SMD Schottky Barrier Diode
|
Comchip Technology
|
| KI1304BDL |
TrenchFET Power MOSFET 100 Rg Tested Drain-source voltage VDS 30 V
|
TY Semiconductor Co., Ltd
|
| IRSF3010 |
FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=80mohm)
|
IRF[International Rectifier]
|
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