| PART |
Description |
Maker |
| STP240N10F7 |
N-channel 100 V, 2.5 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package
|
ST Microelectronics
|
| STH185N10F3-2 |
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET(TM) III Power MOSFET H2PAK-2 package
|
ST Microelectronics
|
| STB18NF30 |
Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET(TM) II Power MOSFET in a D2PAK package
|
ST Microelectronics
|
| 2SK4171 |
Power MOSFET 60 V, 100 A, 7.2 mOhm Single N-Channel
|
ON Semiconductor
|
| STH260N6F6-2 |
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE Power MOSFET in H2PAK-2 package
|
ST Microelectronics
STMicroelectronics
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
| STL4N10F7 |
N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 3.3x3.3 package
|
ST Microelectronics
|
