| PART |
Description |
Maker |
| KUS086N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KUS220N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU024N06P |
N-ch Trench MOS FET
|
KEC
|
| KUS035N06F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| TPH12008NH |
MOSFETs Silicon N-channel MOS (U-MOS
DC-DC Converters Switching Voltage Regulators Motor Drivers
MOSFETs Silicon N-channel MOS (U-MOS
|
Toshiba Semiconductor
|
| UPA505T PA505T G11241EJ1V0DS00 |
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS
|
NEC[NEC]
|
| BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
Philips
|
| 2SK3503 2SK3503-T1 2SK3503-T2 |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| MBRF10100 MBRF10100-E34W MBRB10100 MBRB10100-E34W |
Trench MOS Schottky technology
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
|
