| PART |
Description |
Maker |
| RF1K49221 FN4314 |
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFETPower MOSFET
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET
From old datasheet system
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET?Power MOSFET
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET
2.5A/ 60V/ 0.130 Ohm/ ESD Rated/ Dual N-Channel LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| RF1K49154 |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET?Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETPower MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| BA3506AF-DXT1 BA3420AL-DX BA3410AF-DXE1 BA5412-DX |
0.069 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18
2 CHANNEL, AUDIO PREAMPLIFIER, PZIP18
1 CHANNEL, AUDIO PREAMPLIFIER, PDSO16
2 CHANNEL, AUDIO AMPLIFIER, PSIP12
PLL FREQUENCY SYNTHESIZER, 130 MHz, PDSO20
1 CHANNEL, AUDIO PREAMPLIFIER, PSIP7
5 W, 2 CHANNEL, AUDIO AMPLIFIER, PSIP12
|
|
| BA3408F-T1 BU2620F BU2620F-E1 |
2 CHANNEL, AUDIO PREAMPLIFIER, PDSO16 SOP-16
PLL FREQUENCY SYNTHESIZER, 130 MHz, PDSO20
|
Intel, Corp.
|
| MRF9130L |
MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| SEMIX101GD126HDS08 |
Trench IGBT Modules 130 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| PHA3135-130M |
Computers; Leaded Process Compatible:Yes RoHS Compliant: Yes RadarPulsedPowerModule15，，13014500msPulse 3.1 - 3.5吉赫
RadarPulsedPowerModule/ 115/ 130/145W/100msPulse 3.1 - 3.5 GHz
RadarPulsedPowerModule 115 130145W100msPulse 3.1 - 3.5 GHz
RadarPulsedPowerModule, 115, 130,145W,100msPulse 3.1 - 3.5 GHz
|
MACOM[Tyco Electronics]
|
| BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
| IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp.
Integrated Device Technology, Inc.
IRF[International Rectifier]
|
| RF1K49092 FN3968 |
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET
From old datasheet system
3.5A/2.5A 12V 0.050/0.130 Ohm Logic Level Complementary LittleFET Power MOSFET
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| 55883-0490 0558830490 |
3.30mm (.130
|
Molex Electronics Ltd.
|
| CM520813 |
SCR/Diode POW-R-BLOK Modules 130 Amperes/800 Volts
SCR/Diode POW-R-BLOK⑩ Modules 130 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
|
