| PART |
Description |
Maker |
| BSS138PW |
60 V, 320 mA N-channel Trench MOSFET
60 V, 360 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| FGD4536 FGD4536TM |
360V PDP Trench IGBT
360 V PDP Trench IGBT
|
Fairchild Semiconductor
|
| M57716L 57716L M57716 |
360-380MHz, 12.5V, 13W, DIGITAL MOBILE RADIO 360 - 380MHz2.5V3W，数字移动通信
360-380MHz / 12.5V / 13W / DIGITAL MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FQD10N20L FQD10N20LTF FQD10N20LTM |
N-Channel QFET MOSFET 200 V, 7.6 A, 360 m
N-Channel QFET? MOSFET 200 V, 7.6 A, 360 mΩ
|
Fairchild Semiconductor
|
| PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., Ltd
|
| FDD5810 FDD581007 FDD5810-F085 |
N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm
N-Channel Logic Level Trench㈢ MOSFET
N-Channel Logic Level Trench? MOSFET
|
Fairchild Semiconductor
|
| FDMC2674_07 FDMC2674 FDMC267407 |
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ
|
FAIRCHILD[Fairchild Semiconductor]
|
| IBM25PPC740-DB0M2660 IBM25PPC740-EB0M2660 IBM25PPC |
32-BIT, 266 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
32-BIT, 233 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
32-BIT, 200 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
32-BIT, 300 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
|
Japan Aviation Electronics Industry, Ltd.
|
| FMP76-010T |
Trench P & N-Channel Power MOSFET Common Drain Topology
62 A, 100 V, 0.011 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET PLASTIC, ISOPLUS, I4-PAK-5
|
IXYS Corporation
IXYS, Corp.
|
| PMZ350UPE PMZ350UPE-15 |
20 V, P-channel Trench MOSFET
|
NXP Semiconductors
|
| 2N7002PW |
60 V, 0.3 A N-channel Trench MOSFET
|
NXP Semiconductors
|
|
