| PART |
Description |
Maker |
| NTD4970N-1G NTD4970NT4G |
8.5 A, 30 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON SEMICONDUCTOR
|
| STP50NE10 |
N-CHANNEL 100V - 0.021 OHM - 50A - TO-220 STRIPFET POWER MOSFET
|
ST Microelectronics
|
| STL6N3LLH6 |
N-channel 30 V, 0.021 Ohm typ., 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in PowerFLAT 2x2 package
|
ST Microelectronics
|
| STL7N6F7 |
N-channel 60 V, 0.021 (ohm) typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package
|
STMicroelectronics
|
| MUX08EP MUX08FP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
Analog Devices, Inc.
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| 1865AN3U1000 |
25 AWG stranded (19x37) .021 bare copper conductor, gas-injected foam HDPE insulation
|
List of Unclassifed Man...
|
| CG3310 ECG3323 ECG3312 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-247VAR
|
|
| XO-543 |
Clock Oscillators, 3.3 Volt,1.0MHz to 70.0MHz
|
Vishay
|
|
