| PART |
Description |
Maker |
| HMC590 |
high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi
|
Hittite Microwave Corporation
|
| LPD200P70 |
PACKAGED HIGH DYNAMIC RANGE PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| LPD200SOT343 |
PACKAGED HIGH DYNAMIC RANGE PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST
PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
| CFK0301 CFK0301-AK-000T |
500 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
High Dynamic Range Dual, Low-Noise GaAs FET
|
List of Unclassifed Manufacturers
etc
|
| MRF9822T1 |
HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT
|
Motorola, Inc
|
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| AS221-306 |
PHEMT GaAs IC High-Power SP4T Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
| AS218-000 |
PHEMT GaAs IC High-Power Transfer Switch 0.1-6 GHz
|
Skyworks Solutions Inc.
|
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
