| PART |
Description |
Maker |
| JHV21HI2 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; Vrwm (V): 12000; IR (µA): 10; 22 A, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| HY27SS08121M-FCP HY27SS08121M-FPCP |
64M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
64M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
|
Hynix Semiconductor, Inc.
|
| HY27SA081G1M-VPEB HY27SA081G1M-VPIP |
128M X 8 FLASH 1.8V PROM, 12000 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| SL0812T-123K-B |
1 ELEMENT, 12000 uH, GENERAL PURPOSE INDUCTOR
|
YAGEO CORP
|
| MC3405D |
DUAL OP-AMP, 12000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO14
|
ON SEMICONDUCTOR
|
| AFT-12634-1RF |
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
AGILENT TECHNOLOGIES INC
|
| CWM-10-8GSQ |
4000 MHz - 12000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.6 dB INSERTION LOSS-MAX
|
MERRIMAC INDUSTRIES INC
|
| S447A0 |
4000 MHz - 12000 MHz RF/MICROWAVE SGL POLE FOUR THROW SWITCH, 2.4 dB INSERTION LOSS
|
MITEQ, Inc.
|
| HY27UA081G1M HY27SA1G1M HY27SA161G1M-TPCB |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
64M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
|
Hynix Semiconductor Inc.
|
| AFPD44-00101200-20P |
100 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER HERMETIC SEALED PACKAGE
|
MITEQ, Inc.
|
| XDMR06C |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 12000 Iv(ucd) If@10mA Typ.= 20795
|
SunLED Company Limited
|
