| PART |
Description |
Maker |
| AS4C4M4E1Q AS4CM4E1Q-50 AS4CM4E1Q-60 AS4CM4EOQ AS4 |
Thick Film Chip Resistor - RMC 1 3.9 5% R 4米4的CMOS QuadCAS的DRAM（江户）家庭
4M X 4 CMOS Quad CAS DRAM (EDO) family
4M x 4 CMOS QuadCAS DRAM (EDO) family
|
Analog Devices, Inc.
ALSC[Alliance Semiconductor Corporation]
|
| MB814400C-60 MB814400C-70 |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| MB8502D064AA-70 MB8502D064AA-60 |
CMOS 2M×64 BIT
Hyper Page Mode DRAM Module(CMOS 2M×64 位超级页面存取模式动态RAM模块)
CMOS 2M?64 BIT Hyper Page Mode DRAM Module(CMOS 2M?64 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu Limited
|
| AS4C4M4F1Q-50TC AS4C4M4F1Q-60TC AS4C4M4F1Q-60JC |
DRAM|FAST PAGE|4MX4|CMOS|SOJ|28PIN|PLASTIC
DRAM|FAST PAGE|4MX4|CMOS|TSOP|28PIN|PLASTIC
4M X 4 FAST PAGE DRAM, 60 ns, PDSO28
|
ALLIANCE SEMICONDUCTOR CORP
|
| MB8504D064AA-70 MB8504D064AA-60 |
CMOS 4M×64 BIT
Hyper Page Mode DRAM Module(CMOS 4M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
| MB8116160A-70 |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16 位快速页面存取模式动态RAM)
CMOS 1 M ?16 BIT Fast Page Mode DRAM(CMOS 1 M ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
| AS4C14400-70JC AS4C14405-60JC AS4C14405-50TC AS4C1 |
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 40ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
|
Alliance Semiconductor
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode)
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp...
Electronic Theatre Controls, Inc.
|
| GM71C17403C |
CMOS DRAM
|
Hyundai
|
| VG2617405 |
CMOS DRAM
|
Vanguard Microelectronics Limited
|
