| PART |
Description |
Maker |
| 2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR
300 V, NPN, Si, POWER TRANSISTOR
20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66
20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61
10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
| Q67000-A5066 TDA4605-3 TDA46053 |
PWM Control IC for SMPS using MOS-Tra...
Control IC for Switched-Mode Power Supplies using MOS-Transistor
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| QM300HA-24 |
300 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| BUL26 |
4 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-251
|
STMICROELECTRONICS
|
| SFT815 |
HIGH ENERGY FAST SWITCHING NPN POWER TRANSISTOR 90 AMPS 300 V
|
SSDI[Solid States Devices, Inc]
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| TC1303B-AA1EUNTR TC1303B-AA0EUN TC1303B-AA2EUN TC1 |
500 mA Synchronous Buck Regulator, 300 mA LDO with Power-Good Output 500毫安同步降压稳压器，300 mA的LDO具有电源就绪输出
|
Yageo, Corp.
Microchip Technology, Inc.
Microchip Technology Inc.
|
| CN301 CN304 CN300 CN302 CN303 |
0.300W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, A Ic, 50 - 300 hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 35V Vceo, A Ic, 20 - hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 35V Vceo, A Ic, 50 - 300 hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, A Ic, 50 - 300 hFE
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
|
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| MJE13003 MJE13002 ON2007 13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS 1.5安培NPN硅功率晶体管300000
GT 6C 3#4 3#16 PIN RECP
SEMICONDUCTOR TECHNICAL DATA
From old datasheet system
|
MOTOROLA INC
Mospec Semiconductor, Corp.
Motorola, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| NTE2412 |
100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Transistor General Purpose, High Voltage Amp, (Compl to NTE2413)
|
NTE[NTE Electronics]
NTE Electronics, Inc.
|
|
