PART |
Description |
Maker |
M6MGT331S4BKT M6MGB331S4BKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
S71WS-N S71WS512NB0BFWYP3 S71WS512NB0BAWAP3 S71WS5 |
Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84 Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品(MCP
|
Spansion Inc. Spansion, Inc.
|
S70WS512N00BFWA23 S70WS512N00BAWAB3 S70WS512N00BAW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory 同硅晶片堆叠多芯片产品(MCP)的512兆位2兆16位)的CMOS 1.8伏,只有同时写,突发模式闪存
|
Spansion Inc. Spansion, Inc.
|
F4655-1305 |
High-Speed Response MCP Assembly Ideal for High Resolution TOF-MS Detector Incorporates a Two-Stage MCP with 4 μm Channel Diameter High-Speed Response MCP Assembly Ideal for High Resolution TOF-MS Detector Incorporates a Two-Stage MCP with 4 レm Channel Diameter
|
Hamamatsu Corporation
|
DS42585 AM29DL324D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM MCP Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
S71GL032A40BFI0B2 S71GL064A80BAI0B3 S71GL064A80BAI |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM SPECIALTY MEMORY CIRCUIT, PBGA56 DIODE ZENER 200MW 5.1V 1005 SPECIALTY MEMORY CIRCUIT, PBGA56 DIODE ZENER 200MW 9.1V 1005 SPECIALTY MEMORY CIRCUIT, PBGA56 Stacked Multi-Chip Product (MCP) Flash Memory and RAM 堆叠式多芯片产品(MCP)的闪存和RAM DIODE ZENER 200MW 4.7V 1005 INDUCTOR POWER 3.3UH 5.4A SMD INDUCTOR,TOROID,HORIZONTAL, 22.0 uH,7.0 IDC,0.015 OHM,
|
Spansion, Inc. Spansion Inc.
|
INTERSILCORP-X9241AWSZT2 X9241AWSZT1 |
Quad Digital Controlled Potentionmeters (XDCP™), Non-Volatile/Low Power/2-Wire/64 Taps; Temperature Range: 0°C to 70°C; Package: 20-SOIC T&R
|
INTERSIL CORP
|
F2223-21SH |
MCP ASSEMBLY
|
Hamamatsu Photonics
|
KAG00J007M-FGG2 |
MCP Memory
|
Samsung Electronics
|
K5A3380YTC-T755 K5A3380YBC-T755 K5A3280YTC-T855 K5 |
MCP MEMORY
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
WF4M32-XH2X5 WF4M32-XG2TX5 WF4M32-XG4TX5 |
Flash MCP 闪存MCP
|
OKI SEMICONDUCTOR CO., LTD.
|