| PART |
Description |
Maker |
| DDTD133HC-7-F DDTD143EC DDTD113EC DDTD113EC09 DDTD |
Prebiased Transistors
500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3
NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
Diodes Inc.
|
| PDTD123YT215 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| ULQ2003D1013TRY ULQ200108 ULQ2004D1013TR |
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Seven Darlington array
|
STMicroelectronics
|
| TD62081AFG TD62081APG TD62082AFG TD62082APG TD6208 |
500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
8ch Darlington Sink Driver
|
Toshiba Semiconductor
|
| PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| PPF440J |
N Channel MOSFET; Package: TO-257; ID (A): 4.4; RDS(on) (Ohms): 0.85; PD (W): 60; BVDSS (V): 500; Rq: 2.1; 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
|
Microsemi, Corp.
|
| VMO40-05P1 VMO60-05F VMO650-01F |
41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET ECOPAC-4
High dv/dt, Low-trr, HDMOS-TM Family 60 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
690 A, 100 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| PDTD123TT PDTD123TK PDTD123TS |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open NPN配电阻型晶体管：耐压0V，电00mAR1 = 2.2 千欧 R2 =开
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
|
NXP Semiconductors N.V.
|
| 2N3859A |
NPN General Purpose Amplifier 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2N3724 2N3724.MODE1 |
500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
|
SEMELAB LTD
Seme LAB
|
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